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| TECHNICAL DATA SILICON NPN TRANSISTOR Devices 2N6232 * * FAST SWITCHING LOW SATURATION VOLTAGE 10 AMP 100 V MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Peak (1) Base Current - Continuous Total Power Dissipation @ TC = 250C Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD TJ, Tstg Symbol RJC Value 100 140 7.0 10 1.25 -65 to +200 Max. 6.67 Units Vdc Vdc Vdc Adc Adc W W/0C 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 0 TO-5 (1) Pulse Test: Pulse Width = Duty Cycle < % ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (2) IC = 100 mAdc, IB = 0 Collector-Emitter Cutoff Current VCE = 140 Vdc, Rbe = 0 Collector Cutoff Current VCE = 100 Vdc, RBE = 0 , TC = 1500C Emitter-Base Cutoff Current VEB = 7.0 Vdc, IC = 0 VCEO(sus) ICES ICES IEBO 100 0.2 0.1 10 Vdc uAdc mAdc uAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 10604 Page 1 of 2 2N6232 ELECTRICAL CHARACTERISTICS (con't) ON CHARACTERISTICS (2) Characteristics Symbol Min. Max. Unit DC Current Gain IC = 5.0 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 5 Adc, IB = .5 Adc Base-Emitter Saturation Voltage IC = 10 Adc, IB = 1.0 Adc hFE VCE(sat) VBE(ON) 25 100 0.7 1.8 Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance VCB = 10 Vdc, IE = 0, f = 1.0 MHz Cobo t t 150 250 1200 PF ns ns SWITCHING CHARACTERISTICS IC = 5.0 Adc, IB1= Ib2 = 0.5 A Duty Cycle - 2.0% (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. on off 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 10604 Page 2 of 2 This datasheet has been download from: www..com Datasheets for electronics components. |
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